Financial Releases
RFMD(R) Releases Industry's First GaN CATV Amplifier Modules
The D10040200PH1 and D10040230PH1 feature 20 dB and 23 dB of gain, respectively, and are the first power doubler amplifier modules to utilize an ultra-linear, high-efficiency GaN process technology. By combining multiple compound semiconductor technologies in a highly integrated, hybrid amplifier module RFMD® designers are able to produce unmatched performance across all critical multi-carrier distortion parameters while also increasing output power capability and efficiency. With this unique blend of performance attributes, the D10040200PH1 and D10040230PH1 deliver significant improvements over competing devices in all key parameters and provide the utmost in design flexibility -- all while maintaining the ease of use CATV infrastructure original equipment manufacturers (OEMs) have come to expect from industry-standard SOT115J packaged amplifier modules.
As an example, CATV infrastructure designers can utilize either the D10040200PH1 or D10040230PH1 in HFC optical nodes to increase final power output by 2 to 3 dBmV over competing devices while maintaining equivalent multi-carrier distortion performance, in particular Carrier to Intermodulation Noise (CIN) levels. Alternatively, when best-in-class CIN performance is desired, RF output drive level may be reduced with minimal external tuning -- easing implementation for equipment OEMs.
RFMD's innovative implementation of GaN in this new generation of CATV amplifier modules dramatically improves CIN performance at an opportune time in the CATV market, said Alastair Upton, general manager of RFMD's Broadband and Consumer Business Unit. As multiple system operators (MSOs) increase digitally modulated transmissions over their CATV infrastructure and continue to implement fiber deep programs, the low distortion and high output power of these breakthrough products enable OEMs to better service the demand for higher-performance CATV infrastructure equipment.
Technical features of the D10040200PH1 and D10040230PH1 include:
-- +24 Vdc supply voltage
-- Industry-standard SOT115J module package
-- No external input/output matching with minimal external support components
-- Maximum CTB of -74 dBc and CSO of -68 dBc
-- Industry-leading CIN of 65 dB minimum for the D10040200PH1 and 63 dB minimum for the D10040230PH1
Production quantities of D10040200PH1 and D10040230PH1 are available immediately and based on design win activity RFMD anticipates shipments will commence within the current calendar year. For more information about RFMD's power doublers and other CATV products please see www.rfmd.com/broadbandcatv. Specific test parameters and other information about the D10040200PH1 and D10040230PH1 are available at the following URL: www.rfmd.com/powerdoublers
About RFMD: RF Micro Devices (Nasdaq: RFMD) is a global leader in the design and manufacture of high-performance radio frequency systems and solutions. RFMD's cellular front ends, cellular transceivers, RF components and system- on-chip (SoC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, cellular base station, wireless local area network (WLAN), CATV networking, aerospace, defense, and global positioning systems (GPS) markets. Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier to the world's leading mobile device and RF equipment manufacturers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001- certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's website at www.rfmd.com.
This press release includes forward-looking statements within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as may, will, should, could, expect, plan, anticipate, believe, estimate, predict, potential, continue and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in quarterly operating results, the rate of growth and development of wireless markets, risks associated with the operation of our wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, our ability to reduce costs and improve gross margins by implementing innovative technologies, our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited number of customers, and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
SOURCE RF Micro Devices, Inc.
06/25/2008
CONTACT:
Doug DeLieto, VP, Investor Relations, 1-336-678-7968,
or
Jerry
Neal, Executive Vice President, 1-336-678-7001,
both of RFMD®
Web site: http://www.rfmd.com
http://www.rfmd.com/broadbandcatv
http://www.rfmd.com/powerdoublers
(RFMD)