RFMD(R) Introduces GaN High-Power Transistor Product Family; Company Currently Sampling Lead Base Station Customers

SAN FRANCISCO, Jun 13, 2006 (BUSINESS WIRE) -- RFMD^® (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today introduced a family of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) high-power transistors and is sampling to top-tier cellular infrastructure and WiMAX base station customers. The sampling of these transistors represents the achievement of a baseline 0.5um GaN high-power transistor process by RFMD.

"The infrastructure market is a key growth area for RFMD that leverages our existing technological and manufacturing expertise," said Jeff Shealy, Vice President, Infrastructure Product Group for RFMD. "With the achievement of our baseline GaN process technology, we are positioned to provide customers with the high-power, broadband solutions that are needed to meet their growing demand for more cost-effective and more efficient deployment of next-generation wireless infrastructure."

"For cellular infrastructure and WiMAX base station OEMs dependant on maximizing power and efficiency, RFMD's GaN transistors provide higher at-package matching impedance, higher power density and wider bandwidth performance when compared with silicon LDMOS devices," said Bill Pratt, Co-founder, Chief Technical Officer and Corporate Vice President for RFMD. "In addition, RFMD is the world's largest manufacturer of GaAs wafers and is able to achieve distinct cost advantages by utilizing our high-volume manufacturing environment at our Greensboro, North Carolina, headquarters."

These high power devices show excellent peak drain efficiency up to 67% at UMTS and up to 60% at WiMAX frequency bands. RFMD has achieved high gain of 16dB, high power density of up to 4W/mm at 28V and 1,000 hour high temperature reliability results.

RFMD's GaN HEMT transistors for the wireless cellular market are targeted to the UMTS or 3G base station segment and include the RF3820 (8W), RF3912 (60W), RF3913 (90W) and RF3914 (120W). RFMD's GaN HEMT transistors targeted to the emerging WiMAX base station segment include the 2.5 GHz RF3916 (50W), RF3917 (75W), RF3918 (100W) and 3.5 GHz RF3821 (8W), RF3919 (50W).

For more information about this and other RFMD products and services, be sure to visit RFMD at IEEE MTT-S International Microwave Symposium 2006 in San Francisco, California, June 13-15, 2006 at booth 1207.

About RFMD

RFMD is a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications. RFMD's power amplifiers, transmit modules, cellular transceivers and system-on-chip (SOC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in current- and next-generation mobile handsets, cellular base stations, wireless local area networks (WLANs), wireless personal area networks (WPANs) and global positioning systems (GPS). Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier enabling the world's leading mobile device manufacturers to deliver advanced wireless capabilities that satisfy current and future market demands.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ National Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.

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SOURCE: RFMD^®

RFMD Jerry Neal or Doug DeLieto, 336-664-1233