RFMD Introduces Family OF GaN Power Amplifiers for WCDMA, WiMAX and Public Mobile Radio ApplicationsGREENSBORO, N.C.--(BUSINESS WIRE)--Nov. 16, 2006--RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the introduction and sampling of Gallium Nitride (GaN) wideband power amplifier ICs to Tier 1 WiMAX, cellular base station and Public Mobile Radio (PMR) customers. The family achieves superior performance in gain, output power and efficiency across a broad range of frequencies as compared to currently available gallium arsenide (GaAs) and silicon LDMOS products.

"Our GaN process technology positions RFMD to provide the high-power, broadband solutions needed to meet growing customer demand for more cost-effective and more efficient deployment of next-generation wireless infrastructure," said Jeff Shealy, RFMD Vice President, Infrastructure Product Group. "RFMD's GaN power ICs deliver a simple, single amplifier solution for wideband applications dependant on maximizing power, bandwidth and efficiency."

The new family includes multiple parts, RF3821 (8W P1dB WiMAX PA, 2.3-2.7GHz), RF 3823 (8W P1dB WiMAX PA, 3.3-3.8GHz), RF3822 (14W saturated power Public Mobile Radio PA, 100-1000MHz), and RF 3820 (8W P1dB cellular PA, 1.8-2.2GHz). Both WiMAX power amplifier ICs provide 29dBm linear output power with 2.5% EVM and flat gain of 11dB across multiple bands. The cellular power amplifier IC provides 27dBm linear output power with -50dBc ACPR and flat gain of 13dB across DCS/PCS/WCDMA frequency bands. The PMR power amplifier IC provides 14W to 12W saturated output power and flat gain of 11.5dB with PAE of 65% mid band at 500MHz. The designs operate on a 28V rail and include internal-matching elements to deliver a 50-ohm interface over the band of operation and are packaged in a thermally enhanced AlN package for efficient heat removal.

RFMD anticipates production shipments of the GaN power amplifiers will commence in calendar year 2007.

Additional information about the features and pricing of the GaN process technology can be found by visiting www.rfmd.com.

About RFMD: RFMD (NASDAQ: RFMD) is a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications. RFMD's power amplifiers, transmit modules, cellular transceivers and system-on-chip (SOC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in current- and next-generation mobile handsets, cellular base stations, wireless local area networks (WLANs), wireless personal area networks (WPANs) and global positioning systems (GPS). Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier enabling the world's leading mobile device manufacturers to deliver advanced wireless capabilities that satisfy current and future market demands.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.

This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in quarterly operating results, the rate of growth and development of wireless markets, risks associated with the operation of our wafer fabrication facilities, molecular beam epitaxy facility, assembly facility and test and tape and reel facilities, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, our ability to reduce costs and improve gross margins by implementing innovative technologies, our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited number of customers, and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.

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CONTACT: RFMD
Jerry Neal
336-678-7054
or
Brian K. Cockman
336-337-6978

SOURCE: RF Micro Devices, Inc.